paper 150305211009

Published: 2015-07-09

A V-band Balanced MMIC Power Amplifier

Robin Sloan,

Robin Sloan

The University of Manchester, UK

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Sheheera Ismail,

Sheheera Ismail

The University of Manchester, UK

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Shokrollah Karimian

The University of Manchester, UK

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Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2809-2814

DOI:10.2532/PIERS150305211009

Abstract

A highly stable V-band balanced power amplifier has been proposed based on MMIC using the pseudomorphic High Electron Mobility Transistor (pHEMT). The amplifier consists of two stages with device length of 8 × 25 µm and 2 × 25 µm gate widths. The design kit of PP10 WIN Semiconductor Corp. has been used. The simulation results show power and gain levels of 18 dBm and 12.5 dB, respectively, with a tolerance of ±0.8 dB over the broadband range of 40–80 GHz. Microstrip Lange couplers are used as 3 dB quadrature power splitters and combiners. The amplifier has an acceptable performance with low input and output VSWRs, high stability, fairly flat gain and constant power over the whole bandwidth; and so it can be a good candidate for broadband millimetre-wave front end transceivers systems, and also, as an instrumentation amplifier in measurement systems.

Citation

Robin Sloan, Sheheera Ismail, and Shokrollah Karimian, "A V-band Balanced MMIC Power Amplifier," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2809-2814

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