paper 150205051351

Abstract

A design approach to amplifier bias circuits using a discrete GaN on SiC HEMT is presented is presented. Incorporating matching circuits to bias circuits, various simulations are carried out to minimize the effect of bias circuits on the overall behavior of the amplifier. Simulation results show good matching with S11 = −12.2 dB, S22 = −14 dB and a gain value at 15.4 dB. The resulting S parameter values correspond to K = 1.3 and D < 1, demonstrating stability of the circuit. Using this approach, a single stage X-band amplifier design with only one MMIC amplifier is presented, exhibiting an excellent performance at 10 GHz, which can be utilized in Solid State T/R module for advanced Phased Array Radar Systems.

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Nikolaos K. Uzunoglu

Christos N. Vazouras

Evangelia A. Karagianni

Timothea J. Korfiati

Christina C. Lessi